Field effect transistor with reduced gate leakage current

Invention Grant

US08466495B2 Field effect transistor with reduced gate leakage current 有权

Title translation: 具有减小栅极漏电流的场效应晶体管

Please log in to see more content

Patent Title: Field effect transistor with reduced gate leakage current
Patent Title (中): 具有减小栅极漏电流的场效应晶体管
Application No.: US13468373

Application Date: 2012-05-10
Publication No.: US08466495B2

Publication Date: 2013-06-18
Inventor: Yuji Ando , Hironobu Miyamoto , Tatsuo Nakayama , Yasuhiro Okamoto , Takashi Inoue , Yasuhiro Murase , Kazuki Ota , Akio Wakejima , Naotaka Kuroda
Applicant: Yuji Ando , Hironobu Miyamoto , Tatsuo Nakayama , Yasuhiro Okamoto , Takashi Inoue , Yasuhiro Murase , Kazuki Ota , Akio Wakejima , Naotaka Kuroda
Applicant Address: JP Tokyo
Assignee: NEC Corporation
Current Assignee: NEC Corporation
Current Assignee Address: JP Tokyo
Agency: Young & Thompson
Priority: JP2006-091969 20060329
Main IPC: H01L29/80
IPC: H01L29/80

Field effect transistor with reduced gate leakage current

Abstract:

Disclosed is an HJFET 110 which comprises: a channel layer 12 composed of InyGa1-yN (0≦y≦1); a carrier supply layer 13 composed of AlxGa1-xN (0≦x≦1), the carrier supply layer 13 being provided over the channel layer 12 and including at least one p-type layer; and a source electrode 15S, a drain electrode 15D and a gate electrode 17 which are disposed facing the channel layer 12 through the p-type layer, and provided over the carrier supply layer 13. The following relational expression is satisfied: 5.6×1011x

Abstract(Chinese):

公开了一种HJFET 110，其包括：由In y Ga 1-y N（0 @ y 1）组成的沟道层12; 由Al x Ga 1-x N（0 @ x 1）构成的载流子供给层13，载流子供给层13设置在沟道层12上并且包括至少一个p型层; 以及源极电极15S，漏极电极15D和栅极电极17，其通过p型层面对沟道层12，并且设置在载流子供给层13上。满足以下关系式：5.6×10×11× NA×eta×t [cm-2] <5.6×1013x，其中x表示载体供给层的Al组成比，t表示所述p型层的厚度，NA表示杂质浓度，eta表示活化比。

Public/Granted literature

US20120217547A1 FIELD EFFECT TRANSISTOR WITH REDUCED GATE LEAKAGE CURRENT Public/Granted day:2012-08-30

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L29/00	专门适用于整流、放大、振荡或切换，并具有至少一个电位跃变势垒或表面势垒的半导体器件；具有至少一个电位跃变势垒或表面势垒，例如PN结耗尽层或载流子集结层的电容器或电阻器；半导体本体或其电极的零部件（H01L31/00至H01L47/00，H01L51/05优先；除半导体或其电极之外的零部件入H01L23/00；由在一个共用衬底内或其上形成的多个固态组件组成的器件入H01L27/00）
H01L29/66	.按半导体器件的类型区分的
H01L29/68	..只能通过对一个不通有待整流、放大或切换的电流的电极供给电流或施加电位方可进行控制的（H01L29/96优先）
H01L29/76	...单极器件
H01L29/772	....场效应晶体管
H01L29/80	.....由PN结或其他整流结栅产生场效应的