Invention Grant
- Patent Title: Galvanic isolation fuse and method of forming the fuse
- Patent Title (中): 电隔离保险丝和形成保险丝的方法
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Application No.: US13208890Application Date: 2011-08-12
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Publication No.: US08466535B2Publication Date: 2013-06-18
- Inventor: Peter J. Hopper , William French , Ann Gabrys , Martin Fallon
- Applicant: Peter J. Hopper , William French , Ann Gabrys , Martin Fallon
- Applicant Address: US CA Santa Clara
- Assignee: National Semiconductor Corporation
- Current Assignee: National Semiconductor Corporation
- Current Assignee Address: US CA Santa Clara
- Agent Eugene C. Conser; Wade J. Brady, III; Frederick J. Telecky, Jr.
- Main IPC: H01L27/06
- IPC: H01L27/06
Abstract:
The spikes in current and voltage that result from the failure of a galvanic dielectric layer are safely contained by a galvanic isolation fuse that pops and forms and open circuit between a high-voltage die and a low-voltage die in response to the failure of the galvanic dielectric layer.
Public/Granted literature
- US20130037908A1 Galvanic Isolation Fuse and Method of Forming the Fuse Public/Granted day:2013-02-14
Information query
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