发明授权
- 专利标题: Method and apparatus for testing a memory device
- 专利标题(中): 用于测试存储器件的方法和装置
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申请号: US12716341申请日: 2010-03-03
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公开(公告)号: US08466707B2公开(公告)日: 2013-06-18
- 发明人: Baker S. Mohammad , Hong S. Kim , Paul Douglas Bassett
- 申请人: Baker S. Mohammad , Hong S. Kim , Paul Douglas Bassett
- 申请人地址: US CA San Diego
- 专利权人: QUALCOMM Incorporated
- 当前专利权人: QUALCOMM Incorporated
- 当前专利权人地址: US CA San Diego
- 代理商 Peter Michael Kamarchik; Nicholas J. Pauley; Joseph Agusta
- 主分类号: G01R31/02
- IPC分类号: G01R31/02
摘要:
In a particular embodiment, a method includes receiving a testing activation signal at a controller coupled to a semiconductor device. The method further includes biasing a well of at least one transistor of the semiconductor device in response to the received testing activation signal. The bias is provided by a biasing circuit that is responsive to the controller. While the well is biased, a test of the semiconductor device is performed to generate testing data.
公开/授权文献
- US20110215827A1 Method and Apparatus for Testing a Memory Device 公开/授权日:2011-09-08
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