Invention Grant
- Patent Title: Gate drive circuit and associated method
- Patent Title (中): 门驱动电路及相关方法
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Application No.: US13450599Application Date: 2012-04-19
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Publication No.: US08471604B2Publication Date: 2013-06-25
- Inventor: Alfred Permuy , Nicholas D. Benavides , Luke Solomon
- Applicant: Alfred Permuy , Nicholas D. Benavides , Luke Solomon
- Applicant Address: GB Warwickshire
- Assignee: GE energy Power Conversion Technology Limited
- Current Assignee: GE energy Power Conversion Technology Limited
- Current Assignee Address: GB Warwickshire
- Agency: Eckert Seamans Cherin & Mellott, LLC
- Agent Philip E. Levy
- Main IPC: H03K3/00
- IPC: H03K3/00

Abstract:
A method of driving a number of series connected active power semiconductor groups, wherein each of the active power semiconductor groups includes one or more gate oxide-isolated active power semiconductor devices. The method includes generating a current pulse, providing the current pulse to a primary portion of a transformer unit and in response thereto causing a number of reflected current pulses to be reflected at a secondary portion of the transformer unit, and transferring and latching each of the reflected current pulses to create a respective latched gate drive signal, and providing each respective latched gate drive signal to an associated one of the active power semiconductor groups for driving the one or more gate oxide-isolated active power semiconductor devices of the associated one of the active power semiconductor groups. Also, a gate drive circuit that implements the method.
Public/Granted literature
- US20130099831A1 GATE DRIVE CIRCUIT AND ASSOCIATED METHOD Public/Granted day:2013-04-25
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