发明授权
US08472255B2 Compensation of non-volatile memory chip non-idealities by program pulse adjustment
有权
通过程序脉冲调整来补偿非易失性存储器芯片的非理想性
- 专利标题： Compensation of non-volatile memory chip non-idealities by program pulse adjustment
- 专利标题（中）： 通过程序脉冲调整来补偿非易失性存储器芯片的非理想性
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申请号： US13605714申请日： 2012-09-06
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公开(公告)号： US08472255B2公开(公告)日： 2013-06-25
- 发明人: Nima Mokhlesi , Dengtao Zhao , Henry Chin , Tapan Samaddar
- 申请人： Nima Mokhlesi , Dengtao Zhao , Henry Chin , Tapan Samaddar
- 申请人地址： US TX Plano
- 专利权人： SanDisk Technologies Inc.
- 当前专利权人： SanDisk Technologies Inc.
- 当前专利权人地址： US TX Plano
- 代理机构： Vierra Magen Marcus LLP
- 主分类号： G11C11/34
- IPC分类号： G11C11/34
摘要：
To program a set of non-volatile storage elements, a set of programming pulses are applied to the control gates (or other terminals) of the non-volatile storage elements. The programming pulses have pulse widths that vary as a function of simulated pulse magnitude data. The programming pulses can also have pulse magnitudes that vary based on measurements taken while testing the set of non-volatile storage elements. In one embodiment, the pulse widths are determined after simulation performed prior to fabrication of the non-volatile storage elements. In another embodiment, the pulse magnitudes are calculated after fabrication of the non-volatile storage elements.