发明授权
- 专利标题: Production scale fabrication method for high resolution AFM tips
- 专利标题(中): 高分辨率AFM提示的生产规模制作方法
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申请号: US13608396申请日: 2012-09-10
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公开(公告)号: US08474061B2公开(公告)日: 2013-06-25
- 发明人: Guy Cohen , Mark C. Reuter , Brent A. Wacaser , Maha M. Khayyat
- 申请人: Guy Cohen , Mark C. Reuter , Brent A. Wacaser , Maha M. Khayyat
- 申请人地址: US NY Armonk SA Riyadh
- 专利权人: International Business Machines Corporation,King Abdulaziz City for Science and Technology
- 当前专利权人: International Business Machines Corporation,King Abdulaziz City for Science and Technology
- 当前专利权人地址: US NY Armonk SA Riyadh
- 代理机构: Scully, Scott, Murphy & Presser, P.C.
- 代理商 Louis J. Percello, Esq.
- 主分类号: G01Q60/38
- IPC分类号: G01Q60/38 ; B82Y40/00
摘要:
A method of fabricating high resolution atomic force microscopy (AFM) tips including a single semiconductor nanowire grown at an apex of a semiconductor pyramid of each AFM tip is provided. The semiconductor nanowire that is grown has a controllable diameter and a high aspect ratio, without significant tapering from the tip of the semiconductor nanowire to its base. The method includes providing an AFM probe including a semiconductor cantilever having a semiconductor pyramid extending upward from a surface of said semiconductor cantilever. The semiconductor pyramid has an apex. A patterned oxide layer is formed on the AFM probe. The patterned oxide layer has an opening that exposes the apex of the semiconductor pyramid. A single semiconductor nanowire is grown on the exposed apex of the semiconductor pyramid utilizing a non-oxidized Al seed material as a catalyst for nanowire growth.
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