发明授权
- 专利标题: Method for producing a single crystal of semiconductor material
- 专利标题(中): 半导体材料单晶的制造方法
-
申请号: US12539011申请日: 2009-08-11
-
公开(公告)号: US08475592B2公开(公告)日: 2013-07-02
- 发明人: Wilfried von Ammon , Ludwig Altmannshofer , Helge Riemann , Joerg Fischer
- 申请人: Wilfried von Ammon , Ludwig Altmannshofer , Helge Riemann , Joerg Fischer
- 申请人地址: DE Munich
- 专利权人: Siltronic AG
- 当前专利权人: Siltronic AG
- 当前专利权人地址: DE Munich
- 代理机构: Brooks Kushman P.C.
- 优先权: DE102008038810 20080813
- 主分类号: C30B11/00
- IPC分类号: C30B11/00 ; C30B9/00 ; C30B17/00 ; C30B21/02 ; C30B28/06 ; C30B35/00
摘要:
A single crystal of semiconductor material is produced by a method of melting semiconductor material granules by means of a first induction heating coil on a dish with a run-off tube consisting of the semiconductor material, forming a melt of molten granules which extends from the run-off tube in the form of a melt neck and a melt waist to a phase boundary, delivering heat to the melt by means of a second induction heating coil which has an opening through which the melt neck passes, crystallizing the melt at the phase boundary, and delivering a cooling gas to the run-off tube and to the melt neck in order to control the axial position of an interface between the run-off tube and the melt neck.
公开/授权文献
信息查询
IPC分类: