发明授权
- 专利标题: Silicon carbide based porous material and method for preparation thereof
- 专利标题(中): 碳化硅基多孔材料及其制备方法
-
申请号: US12325080申请日: 2008-11-28
-
公开(公告)号: US08475906B2公开(公告)日: 2013-07-02
- 发明人: Takahiro Tomita , Kenji Morimoto
- 申请人: Takahiro Tomita , Kenji Morimoto
- 申请人地址: JP Nagoya
- 专利权人: NGK Insulators, Ltd.
- 当前专利权人: NGK Insulators, Ltd.
- 当前专利权人地址: JP Nagoya
- 代理机构: Oliff & Berridge, PLC
- 优先权: JP2007-309967 20071130; JP2008-300742 20081126
- 主分类号: C04B35/00
- IPC分类号: C04B35/00
摘要:
A silicon carbide based porous material, which contains a metal silicide in an amount of 1 to 30% by mass and having a porosity of 38 to 80%, is provided.
公开/授权文献
信息查询