发明授权
US08475906B2 Silicon carbide based porous material and method for preparation thereof 有权
碳化硅基多孔材料及其制备方法

Silicon carbide based porous material and method for preparation thereof
摘要:
A silicon carbide based porous material, which contains a metal silicide in an amount of 1 to 30% by mass and having a porosity of 38 to 80%, is provided.
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