Invention Grant
US08476143B2 Deep contacts of integrated electronic devices based on regions implanted through trenches
有权
基于通过沟槽植入的区域的集成电子设备的深度接触
- Patent Title: Deep contacts of integrated electronic devices based on regions implanted through trenches
- Patent Title (中): 基于通过沟槽植入的区域的集成电子设备的深度接触
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Application No.: US13349416Application Date: 2012-01-12
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Publication No.: US08476143B2Publication Date: 2013-07-02
- Inventor: Pietro Montanini , Marta Mottura , Giuseppe Croce
- Applicant: Pietro Montanini , Marta Mottura , Giuseppe Croce
- Applicant Address: IT Agrate Brianza
- Assignee: STMicroelectonics S.r.L.
- Current Assignee: STMicroelectonics S.r.L.
- Current Assignee Address: IT Agrate Brianza
- Agency: Graybeal Jackson LLP
- Priority: ITMI2007A2341 20071214
- Main IPC: H01L21/76
- IPC: H01L21/76
Abstract:
An embodiment of an integrated circuit includes first and second semiconductor layers and a contact region disposed in the second layer. The first semiconductor layer is of a first conductivity, and the second semiconductor layer is disposed over the first layer and has a surface. The contact region is contiguous with the surface, contacts the first layer, includes a first inner conductive portion, and includes an outer conductive portion of the first conductivity. The contact region may extend deeper than conventional contact regions, because where the inner conductive portion is formed from a trench, doping the outer conductive portion via the trench may allow one to implant the dopants more deeply than conventional techniques allow.
Public/Granted literature
- US20130017676A1 DEEP CONTACTS OF INTEGRATED ELECTRONIC DEVICES BASED ON REGIONS IMPLANTED THROUGH TRENCHES Public/Granted day:2013-01-17
Information query
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