发明授权
US08476627B2 Thin-film transistor, method of fabricating the thin-film transistor, and display substrate using the thin-film transistor
有权
薄膜晶体管，制造薄膜晶体管的方法以及使用该薄膜晶体管的显示基板
- 专利标题： Thin-film transistor, method of fabricating the thin-film transistor, and display substrate using the thin-film transistor
- 专利标题（中）： 薄膜晶体管，制造薄膜晶体管的方法以及使用该薄膜晶体管的显示基板
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申请号： US13046130申请日： 2011-03-11
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公开(公告)号： US08476627B2公开(公告)日： 2013-07-02
- 发明人: Pil-Sang Yun , Young-Wook Lee , Woo-Geun Lee
- 申请人： Pil-Sang Yun , Young-Wook Lee , Woo-Geun Lee
- 代理机构： H.C. Park & Associates, PLC
- 优先权： KR10-2010-0023367 20100316
- 主分类号： H01L29/786
- IPC分类号： H01L29/786
摘要：
Provided is an oxide thin-film transistor (TFT) substrate that may enhance the display quality of a display device and a method of fabricating the same via a simple process. The oxide TFT substrate includes: a substrate, a gate line, a data line, an oxide TFT, and a pixel electrode. An oxide layer of the oxide TFT includes a first region that has semiconductor characteristics and a channel, and a second region that is conductive and surrounds the first region. A portion of the first region is electrically connected to the pixel electrode, and the second region is electrically connected to the data line.
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