发明授权
- 专利标题： Semiconductor device and method of manufacture thereof
- 专利标题（中）： 半导体装置及其制造方法
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申请号： US12918524申请日： 2009-02-26
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公开(公告)号： US08476675B2公开(公告)日： 2013-07-02
- 发明人: Philippe Meunier-Beillard , Johannes J. T. M. Donkers , Erwin Hijzen
- 申请人： Philippe Meunier-Beillard , Johannes J. T. M. Donkers , Erwin Hijzen
- 申请人地址： NL Eindhoven
- 专利权人： NXP B.V.
- 当前专利权人： NXP B.V.
- 当前专利权人地址： NL Eindhoven
- 优先权： EP08102138 20080228; EP08102139 20080228
- 国际申请： PCT/IB2009/050781 WO 20090226
- 国际公布： WO2009/107086 WO 20090903
- 主分类号： H01L29/66
- IPC分类号： H01L29/66
摘要：
A semiconductor device (10) comprising a bipolar transistor and a field 5 effect transistor within a semiconductor body (1) comprising a projecting mesa (5) within which are at least a portion of a collector region (22c and 22d) and a base region (33c) of the bipolar transistor. The bipolar transistor is provided with an insulating cavity (92b) provided in the collector region (22c and 22d). The insulating cavity (92b) may be provided by providing a layer (33a) in the collector region (22c), creating an access path, for example by selectively etching polysilicon towards monocrystalline, and removing a portion of the layer (33a) to provide the cavity using the access path. The layer (33a) provided in the collector region may be of SiGe:C. By blocking diffusion from the base region the insulating cavity (92b) provides a reduction in the base collector capacitance and can be described as defining the base contact.
公开/授权文献
- US20110186841A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURE THEREOF 公开/授权日：2011-08-04
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