发明授权
- 专利标题: Super CMOS devices on a microelectronics system
- 专利标题(中): 超级CMOS器件在微电子系统上
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申请号: US12343465申请日: 2008-12-23
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公开(公告)号: US08476689B2公开(公告)日: 2013-07-02
- 发明人: Augustine Wei-Chun Chang
- 申请人: Augustine Wei-Chun Chang
- 代理机构: Sawyer Law Group, P.C.
- 主分类号: H01L27/092
- IPC分类号: H01L27/092 ; H01L27/095
摘要:
A low cost IC solution is disclosed in accordance with an embodiment to provide Super CMOS microelectronics macros. Hereinafter, the Super CMOS or Schottky CMOS all refer to SCMOS. The SCMOS device solutions with a niche circuit element, the complementary low threshold Schottky barrier diode pairs (SBD) made by selected metal barrier contacts (Co/Ti) to P- and N- Si beds of the CMOS transistors. A DTL like new circuit topology and designed wide contents of broad product libraries, which used the integrated SBD and transistors (BJT, CMOS, and Flash versions) as basic components. The macros are composed of diodes that are selectively attached to the diffusion bed of the transistors, configuring them to form generic logic gates, memory cores, and analog functional blocks from simple to the complicated, from discrete components to all grades of VLSI chips. Solar photon voltaic electricity conversion and bio-lab-on-a-chip are two newly extended fields of the SCMOS IC applications.
公开/授权文献
- US20100155782A1 SUPER CMOS DEVICES ON A MICROELECTRONICS SYSTEM 公开/授权日:2010-06-24
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