发明授权
- 专利标题: Semiconductor device and method of fabricating the same
- 专利标题(中): 半导体装置及其制造方法
-
申请号: US12656671申请日: 2010-02-12
-
公开(公告)号: US08476700B2公开(公告)日: 2013-07-02
- 发明人: Young-Mok Kim , Sun-Hak Lee , Tae-Cheol Lee , Yong-Sang Jeong
- 申请人: Young-Mok Kim , Sun-Hak Lee , Tae-Cheol Lee , Yong-Sang Jeong
- 申请人地址: KR Suwon-si, Gyeonggi-do
- 专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人地址: KR Suwon-si, Gyeonggi-do
- 代理机构: Lee & Morse, P.C.
- 优先权: KR10-2009-0011970 20090213
- 主分类号: H01L29/66
- IPC分类号: H01L29/66
摘要:
A semiconductor device comprises a recessed trench in a substrate, a gate insulating layer including a first portion and a second portion, the first portion having a first thickness and covering lower portions of sidewalls of the recessed trench and a bottom surface of the recessed trench, and the second portion having a second thickness and covering upper portions of the sidewalls of the recessed trench, the second thickness being greater than the first thickness, a gate electrode filling the recessed trench, a first impurity region having a first concentration and disposed at opposing sides of the gate electrode, and a second impurity region having a second concentration greater than the first concentration and disposed on the first impurity region to correspond to the second portion of the gate insulating layer.
公开/授权文献
- US20100207204A1 Semiconductor device and method of fabricating the same 公开/授权日:2010-08-19
信息查询
IPC分类: