发明授权
- 专利标题： Magnet-assisted transistor devices
- 专利标题（中）： 磁铁辅助晶体管器件
-
申请号： US13088832申请日： 2011-04-18
-
公开(公告)号： US08476721B2公开(公告)日： 2013-07-02
- 发明人: Yang Li , Insik Jin , Harry Liu , Song S. Xue , Shuiyuan Huang , Michael X. Tang
- 申请人： Yang Li , Insik Jin , Harry Liu , Song S. Xue , Shuiyuan Huang , Michael X. Tang
- 申请人地址： US CA Scotts Valley
- 专利权人： Seagate Technology LLC
- 当前专利权人： Seagate Technology LLC
- 当前专利权人地址： US CA Scotts Valley
- 代理机构： Fredrikson & Byron, P.A.
- 主分类号： H01L29/82
- IPC分类号： H01L29/82 ; H01L21/00 ; H01L21/326
摘要：
A transistor device includes a magnetic field source adapted to deflect a flow of free electron carriers within a channel of the device, between a source region and a drain region thereof. According to preferred configurations, the magnetic field source includes a magnetic material layer extending over a side of the channel that is opposite a gate electrode of the transistor device.
公开/授权文献
- US20110193148A1 MAGNET-ASSISTED TRANSISTOR DEVICES 公开/授权日：2011-08-11
信息查询
IPC分类:
