发明授权
US08477531B2 Spin torque transfer magnetoresistive random access memory in disk base with reduced threshold current
有权
磁盘底座中的自旋转矩磁阻随机存取存储器，具有降低的阈值电流
- 专利标题： Spin torque transfer magnetoresistive random access memory in disk base with reduced threshold current
- 专利标题（中）： 磁盘底座中的自旋转矩磁阻随机存取存储器，具有降低的阈值电流
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申请号： US12969163申请日： 2010-12-15
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公开(公告)号： US08477531B2公开(公告)日： 2013-07-02
- 发明人: Chwen Yu , Tien-Wei Chiang
- 申请人： Chwen Yu , Tien-Wei Chiang
- 申请人地址： TW Hsin-Chu
- 专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人地址： TW Hsin-Chu
- 代理机构： Haynes and Boone, LLP
- 主分类号： H01L29/82
- IPC分类号： H01L29/82
摘要：
A semiconductor memory device includes a magnetic tunneling junction (MTJ); and a magnetic feature aligned with the MTJ and approximate the MTJ. When viewed in a direction perpendicular to the MTJ and the magnetic feature, the magnetic feature has a disk shape, and the MTJ has an elliptical shape and is positioned within the disk shape.
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