发明授权
- 专利标题: Method of manufacturing semiconductor device
- 专利标题(中): 制造半导体器件的方法
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申请号: US13236229申请日: 2011-09-19
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公开(公告)号: US08480915B2公开(公告)日: 2013-07-09
- 发明人: Gaku Minamihaba , Yukiteru Matsui
- 申请人: Gaku Minamihaba , Yukiteru Matsui
- 申请人地址: JP Tokyo
- 专利权人: Kabushiki Kaisha Toshiba
- 当前专利权人: Kabushiki Kaisha Toshiba
- 当前专利权人地址: JP Tokyo
- 代理机构: Finnegan, Henderson, Farabow, Garrett & Dunner, LLP
- 优先权: JP2011-085443 20110407
- 主分类号: B44C1/22
- IPC分类号: B44C1/22 ; C03C15/00 ; C03C25/68 ; C23F1/00
摘要:
According to one embodiment, the method of manufacturing a semiconductor device includes contacting a film formed on a semiconductor substrate with a rotating polishing pad which is supported on a turntable, and feeding polishing foam to a region of the polishing pad with which the film is contacted, thereby polishing the film. The polishing foam is obtained by turning the aqueous dispersion into a foamy body. The aqueous dispersion includes 0.01-20% by mass of abrasive grain and 0.01-1% by mass of foam forming and retaining agent, all based on a total mass of the aqueous dispersion.
公开/授权文献
- US20120258597A1 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE 公开/授权日:2012-10-11