Invention Grant
US08481121B2 Methods of forming thin metal-containing films by chemical phase deposition
有权
通过化学相沉积法形成含薄金属膜的方法
- Patent Title: Methods of forming thin metal-containing films by chemical phase deposition
- Patent Title (中): 通过化学相沉积法形成含薄金属膜的方法
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Application No.: US12670023Application Date: 2008-07-24
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Publication No.: US08481121B2Publication Date: 2013-07-09
- Inventor: Ravi Kanjolia , Rajesh Odedra , Neil Boag , David Weyburne
- Applicant: Ravi Kanjolia , Rajesh Odedra , Neil Boag , David Weyburne
- Applicant Address: US MO St. Louis
- Assignee: Sigma-Aldrich Co., LLC
- Current Assignee: Sigma-Aldrich Co., LLC
- Current Assignee Address: US MO St. Louis
- Agency: Harness, Dickey & Pierce, P.L.C.
- International Application: PCT/US2008/071015 WO 20080724
- International Announcement: WO2009/015271 WO 20090129
- Main IPC: C23C16/06
- IPC: C23C16/06 ; C23C16/16
Abstract:
Methods of forming thin metal-containing films by chemical phase deposition, particularly atomic layer deposition (ALD) and chemical vapor deposition (CVD), are provided. The methods comprise delivering at least one organometallic precursor to a substrate, wherein the at least one precursor corresponds in structure to Formula (II); wherein: M is Ru, Fe or Os; R is Q-C10-alkyl; X is C1-C10-alkyl; and n is zero, 1, 2, 3, 4 or 5. Further provided are methods of making precursors disclosed herein.
Public/Granted literature
- US20100261350A1 METHODS OF FORMING THIN METAL-CONTAINING FILMS BY CHEMICAL PHASE DEPOSITION Public/Granted day:2010-10-14
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