发明授权
US08481351B2 Active matrix substrate manufacturing method and liquid crystal display device manufacturing method 有权
有源矩阵基板制造方法和液晶显示装置的制造方法

  • 专利标题: Active matrix substrate manufacturing method and liquid crystal display device manufacturing method
  • 专利标题(中): 有源矩阵基板制造方法和液晶显示装置的制造方法
  • 申请号: US13139732
    申请日: 2009-12-16
  • 公开(公告)号: US08481351B2
    公开(公告)日: 2013-07-09
  • 发明人: Kiyohiro Kawasaki
  • 申请人: Kiyohiro Kawasaki
  • 申请人地址: JP Osaka
  • 专利权人: Sharp Kabushiki Kaisha
  • 当前专利权人: Sharp Kabushiki Kaisha
  • 当前专利权人地址: JP Osaka
  • 代理机构: Keating & Bennett, LLP
  • 优先权: JP2008-324392 20081219
  • 国际申请: PCT/JP2009/070999 WO 20091216
  • 国际公布: WO2010/071160 WO 20100624
  • 主分类号: H01L21/84
  • IPC分类号: H01L21/84
Active matrix substrate manufacturing method and liquid crystal display device manufacturing method
摘要:
Provided is an active matrix substrate manufacturing method, including the steps of: selectively forming a laminated structure pattern, by forming the laminated structure on a glass substrate (2), by forming a first photosensitive resin pattern (PR) on the laminated structure, and by selectively forming the laminated structure pattern using the first photosensitive resin pattern (PR), the laminated structure including a metal layer (a scanning signal line (11) material), a gate insulative layer (30), and a semiconductor layer (31, 33) (transistor material); fluorinating a surface of the first photosensitive resin pattern (PR) by dry-etching with fluorine gas; applying a coating-type transparent insulative resin (60) onto the glass substrate (2) to fill a space in the laminated structure pattern; and removing the fluorinated first photosensitive resin pattern (PR). This enables to form, in an active matrix substrate manufacturing process, a scanning signal line and a semiconductor layer with a single mask process.
信息查询
IPC分类:
H 电学
H01 基本电气元件
H01L 半导体器件;其他类目中不包括的电固体器件(使用半导体器件的测量入G01;一般电阻器入H01C;磁体、电感器、变压器入H01F;一般电容器入H01G;电解型器件入H01G9/00;电池组、蓄电池入H01M;波导管、谐振器或波导型线路入H01P;线路连接器、汇流器入H01R;受激发射器件入H01S;机电谐振器入H03H;扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R;一般电光源入H05B;印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K;在具有特殊应用的电路中使用的半导体器件见应用相关的小类)
H01L21/00 专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/70 .由在一共用基片内或其上形成的多个固态组件或集成电路组成的器件或其部件的制造或处理;集成电路器件或其特殊部件的制造(由预制电组件组成的组装件的制造入H05K3/00,H05K13/00)
H01L21/77 ..在公共衬底中或上面形成的由许多固态元件或集成电路组成的器件的制造或处理(电可编程只读存储器或其多步骤的制造方法入H01L27/115)
H01L21/78 ...把衬底连续地分成多个独立的器件(改变表面物理特性或者半导体形状的切割入H01L21/304)
H01L21/82 ....制造器件,例如每一个由许多元件组成的集成电路
H01L21/84 .....衬底不是半导体的,例如绝缘体
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