发明授权
US08481404B2 Leakage control in field effect transistors based on an implantation species introduced locally at the STI edge
有权
基于在STI边缘局部引入的注入种类的场效应晶体管中的泄漏控制
- 专利标题： Leakage control in field effect transistors based on an implantation species introduced locally at the STI edge
- 专利标题（中）： 基于在STI边缘局部引入的注入种类的场效应晶体管中的泄漏控制
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申请号： US12838810申请日： 2010-07-19
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公开(公告)号： US08481404B2公开(公告)日： 2013-07-09
- 发明人: Thorsten Kammler , Maciej Wiatr , Roman Boschke , Peter Javorka
- 申请人： Thorsten Kammler , Maciej Wiatr , Roman Boschke , Peter Javorka
- 申请人地址： KY Grand Cayman
- 专利权人： GLOBALFOUNDRIES Inc.
- 当前专利权人： GLOBALFOUNDRIES Inc.
- 当前专利权人地址： KY Grand Cayman
- 代理机构： Williams, Morgan & Amerson, P.C.
- 优先权： DE102009035409 20090731
- 主分类号： H01L21/76
- IPC分类号： H01L21/76
摘要：
In a static memory cell, the failure rate upon forming contact elements connecting an active region with a gate electrode structure formed above an isolation region may be significantly reduced by incorporating an implantation species at a tip portion of the active region through a sidewall of the isolation trench prior to filling the same with an insulating material. The implantation species may represent a P-type dopant species and/or an inert species for significantly modifying the material characteristics at the tip portion of the active region.
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