Invention Grant
- Patent Title: Method for inspecting and measuring sample and scanning electron microscope
- Patent Title (中): 样品和扫描电子显微镜检查和测量方法
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Application No.: US13107892Application Date: 2011-05-14
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Publication No.: US08481934B2Publication Date: 2013-07-09
- Inventor: Makoto Ezumi , Satoru Iwama , Junichi Kakuta , Takahiro Sato , Akira Ikegami
- Applicant: Makoto Ezumi , Satoru Iwama , Junichi Kakuta , Takahiro Sato , Akira Ikegami
- Applicant Address: JP Tokyo
- Assignee: Hitachi High-Technologies Corporation
- Current Assignee: Hitachi High-Technologies Corporation
- Current Assignee Address: JP Tokyo
- Agency: Miles & Stockbridge P.C.
- Priority: JP2007-250406 20070927
- Main IPC: H01J37/28
- IPC: H01J37/28
Abstract:
As an aspect for realizing accurate observation, inspection, or measurement of the contact hole with large aspect ratio, a method and a device to scan a second electron beam after scanning a first electron beam to a sample to charge the sample are proposed wherein the beam diameter of the first electron beam is made larger than the beam diameter of the second electron beam.
Public/Granted literature
- US20110215243A1 METHOD FOR INSPECTING AND MEASURING SAMPLE AND SCANNING ELECTRON MICROSCOPE Public/Granted day:2011-09-08
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