发明授权
US08481936B2 Scanning electron microscope system and method for measuring dimensions of patterns formed on semiconductor device by using the system
有权
扫描电子显微镜系统和通过使用该系统测量在半导体器件上形成的图案的尺寸的方法
- 专利标题： Scanning electron microscope system and method for measuring dimensions of patterns formed on semiconductor device by using the system
- 专利标题（中）： 扫描电子显微镜系统和通过使用该系统测量在半导体器件上形成的图案的尺寸的方法
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申请号： US13348813申请日： 2012-01-12
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公开(公告)号： US08481936B2公开(公告)日： 2013-07-09
- 发明人: Chie Shishido , Maki Tanaka , Atsushi Miyamoto
- 申请人： Chie Shishido , Maki Tanaka , Atsushi Miyamoto
- 申请人地址： JP Tokyo
- 专利权人： Hitachi High-Technologies Corporation
- 当前专利权人： Hitachi High-Technologies Corporation
- 当前专利权人地址： JP Tokyo
- 代理机构： Antonelli, Terry, Stout & Kraus, LLP.
- 优先权： JP2008-040816 20080222
- 主分类号： H01J37/26
- IPC分类号： H01J37/26
摘要：
The present invention is for providing a scanning electron microscope system adapted to output contour information fitting in with the real pattern edge end of a sample, and is arranged to generate a local projection waveform by projecting the scanning electron microscope image in the tangential direction with respect to the pattern edge at each point of the pattern edge of the scanning electron microscope image, estimate the cross-sectional shape of the pattern transferred on the sample by applying the local projection waveform generated at each point to a library, which has previously been created, correlating the cross-sectional shape with the electron beam signal waveform, obtain position coordinate of the edge end fitting in with the cross-sectional shape, and output the contour of the pattern as a range of position coordinates.