Invention Grant
- Patent Title: Lateral insulated gate bipolar transistors (LIGBTS)
- Patent Title (中): 横向绝缘栅双极晶体管（LIGBTS）
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Application No.: US12648818Application Date: 2009-12-29
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Publication No.: US08482031B2Publication Date: 2013-07-09
- Inventor: Florin Udrea , Vasantha Pathirana , Tanya Trajkovic , Nishad Udugampola
- Applicant: Florin Udrea , Vasantha Pathirana , Tanya Trajkovic , Nishad Udugampola
- Applicant Address: GB Cambridge
- Assignee: Cambridge Semiconductor Limited
- Current Assignee: Cambridge Semiconductor Limited
- Current Assignee Address: GB Cambridge
- Main IPC: H01L29/739
- IPC: H01L29/739 ; H01L21/761 ; H01L21/331
Abstract:
This invention generally relates to lateral insulated gate bipolar transistors (LIGBTs), for example in integrated circuits, methods of increasing switching speed of an LIGBT, a method of suppressing parasitic thyristor latch-up in a bulk silicon LIGBT, and methods of fabricating an LIGBT. In particular, a method of suppressing parasitic thyristor latch-up in a bulk silicon LIGBT comprises selecting a current gain αv for a vertical transistor of a parasitic thyristor of the LIGBT such that in at least one predetermined mode of operation of the LIGBT αv
Public/Granted literature
- US20110057230A1 Lateral Insulated Gate Bipolar Transistors (LIGBTS) Public/Granted day:2011-03-10
Information query
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