发明授权
- 专利标题： Lateral high electron mobility transistor
- 专利标题（中）： 侧向高电子迁移率晶体管
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申请号： US13090350申请日： 2011-04-20
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公开(公告)号： US08482036B2公开(公告)日： 2013-07-09
- 发明人: Markus Zundel , Franz Hirler
- 申请人： Markus Zundel , Franz Hirler
- 申请人地址： AT Villach
- 专利权人： Infineon Technologies Austria AG
- 当前专利权人： Infineon Technologies Austria AG
- 当前专利权人地址： AT Villach
- 代理机构： Murphy, Bilak & Homiller, PLLC
- 主分类号： H01L29/778
- IPC分类号： H01L29/778
摘要：
A lateral HEMT includes a substrate, a first semiconductor layer above the substrate and a second semiconductor layer on the first semiconductor layer. The lateral HEMT further includes a gate electrode, a source electrode, a drain electrode and a rectifying Schottky junction. A first terminal of the rectifying Schottky junction is electrically coupled to the source electrode and a second terminal of the rectifying Schottky junction is electrically coupled to the second semiconductor layer.
公开/授权文献
- US20120267636A1 Lateral High Electron Mobility Transistor 公开/授权日：2012-10-25
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