发明授权
US08482067B2 Lateral extended drain metal oxide semiconductor field effect transistor (LEDMOSFET) with tapered dielectric plates to achieve a high drain-to-body breakdown voltage, a method of forming the transistor and a program storage device for designing the transistor
有权
具有锥形电介质板的横向延伸漏极金属氧化物半导体场效应晶体管（LEDMOSFET），以实现高的漏极对体击穿电压，形成晶体管的方法和用于设计晶体管的程序存储装置
- 专利标题： Lateral extended drain metal oxide semiconductor field effect transistor (LEDMOSFET) with tapered dielectric plates to achieve a high drain-to-body breakdown voltage, a method of forming the transistor and a program storage device for designing the transistor
- 专利标题（中）： 具有锥形电介质板的横向延伸漏极金属氧化物半导体场效应晶体管（LEDMOSFET），以实现高的漏极对体击穿电压，形成晶体管的方法和用于设计晶体管的程序存储装置
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申请号： US13604671申请日： 2012-09-06
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公开(公告)号： US08482067B2公开(公告)日： 2013-07-09
- 发明人: Michel J. Abou-Khalil , Alan B. Botula , Alvin J. Joseph , Theodore J. Letavic , James A. Slinkman
- 申请人： Michel J. Abou-Khalil , Alan B. Botula , Alvin J. Joseph , Theodore J. Letavic , James A. Slinkman
- 申请人地址： US NY Armonk
- 专利权人： International Business Machines Corporation
- 当前专利权人： International Business Machines Corporation
- 当前专利权人地址： US NY Armonk
- 代理机构： Gibb & Riley, LLC
- 代理商 Richard M. Kotulak, Esq.
- 主分类号： H01L29/78
- IPC分类号： H01L29/78
摘要：
A lateral, extended drain, metal oxide semiconductor, field effect transistor (LEDMOSFET) with a high drain-to-body breakdown voltage (Vb) incorporates gate structure extensions on opposing sides of a drain drift region. The extensions are tapered such that a distance between each extension and the drift region increases linearly from one end adjacent to the channel region to another end adjacent to the drain region. In one embodiment, these extensions can extend vertically through the isolation region that surrounds the LEDMOSFET. In another embodiment, the extensions can sit atop the isolation region. In either case, the extensions create a strong essentially uniform horizontal electric field profile within the drain drift. Also disclosed are a method for forming the LEDMOSFET with a specific Vb by defining the dimensions of the extensions and a program storage device for designing the LEDMOSFET to have a specific Vb.