Invention Grant
- Patent Title: Semiconductor devices and methods for fabricating the same
- Patent Title (中): 半导体器件及其制造方法
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Application No.: US13102860Application Date: 2011-05-06
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Publication No.: US08482077B2Publication Date: 2013-07-09
- Inventor: Jongho Lee , Chang-Bong Oh , Ho Lee , Myungsun Kim
- Applicant: Jongho Lee , Chang-Bong Oh , Ho Lee , Myungsun Kim
- Applicant Address: KR Samsung-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Samsung-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do
- Agency: Muir Patent Consulting, PLLC
- Priority: KR10-2010-0043074 20100507
- Main IPC: H01L29/78
- IPC: H01L29/78
Abstract:
A semiconductor device includes a substrate including a first region and a second region each having an n-type region and a p-type region, wherein the n-type region in the first region includes a silicon channel, the p-type region in the first region includes a silicon germanium channel, and the n-type region and the p-type region in the second region respectively include a silicon channel. A first gate insulating pattern formed of a thermal oxide layer is disposed on the substrate of the n-type and p-type regions in the second region.
Public/Granted literature
- US20110272736A1 SEMICONDUCTOR DEVICES AND METHODS FOR FABRICATING THE SAME Public/Granted day:2011-11-10
Information query
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