Provided are a silicon photomultiplier and method for fabricating silicon photomultiplier. The silicon photomultiplier includes a first conductive type semiconductor layer; a first conductive type buried layer disposed in a lower portion of the first conductive type semiconductor layer, and having a higher impurity concentration than the first conductive type semiconductor layer; quench resistors spaced from each other and disposed on the first conductive type semiconductor layer; a transparent insulator formed on the first conductive type semiconductor layer, and exposing the quench resistors; second conductive type doped layers disposed under the quench resistors to contact the first conductive type semiconductor layer; and a transparent electrode commonly connected to the quench resistors electrically.