发明授权
- 专利标题: Multi-bit cell memory devices using error correction coding and methods of operating the same
- 专利标题(中): 使用纠错编码的多位单元存储器件及其操作方法
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申请号: US13039004申请日: 2011-03-02
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公开(公告)号: US08482977B2公开(公告)日: 2013-07-09
- 发明人: Yong June Kim , Jaehong Kim , Junjin Kong , Hong Rak Son
- 申请人: Yong June Kim , Jaehong Kim , Junjin Kong , Hong Rak Son
- 申请人地址: KR
- 专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人地址: KR
- 代理机构: Myers Bigel Sibley & Sajovec, P.A.
- 优先权: KR10-2010-0018657 20100302
- 主分类号: G11C16/04
- IPC分类号: G11C16/04
摘要:
A memory device includes a plurality of multi-bit memory cells. A plurality of input data bits are encoded according to an error correction code to generate a codeword including a plurality of groups of bits. Respective ones of the plurality of multi-bit memory cells are programmed to represent respective ones of the groups of bits of the codeword. The groups of bits of the codeword may be groups of consecutive bits. In some embodiments, the multi-bit memory cells are each configured to store in bits and a length of the codeword is an integer multiple of m. Data may be read from the multi-bit memory cells in page units or cell units to recover the codeword, and the recovered code word may be decode according to the error correction code to recover the input data bits.