Invention Grant
US08482994B2 Semiconductor device having resistance based memory array, method of reading, and systems associated therewith
有权
具有基于电阻的存储器阵列，读取方法和与其相关联的系统的半导体器件
- Patent Title: Semiconductor device having resistance based memory array, method of reading, and systems associated therewith
- Patent Title (中): 具有基于电阻的存储器阵列，读取方法和与其相关联的系统的半导体器件
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Application No.: US13064476Application Date: 2011-03-28
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Publication No.: US08482994B2Publication Date: 2013-07-09
- Inventor: Kwang-Jin Lee , Du Eung Kim , Yong Jun Lee
- Applicant: Kwang-Jin Lee , Du Eung Kim , Yong Jun Lee
- Applicant Address: KR Gyeonggi-Do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Gyeonggi-Do
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: KR10-2008-0034751 20080415
- Main IPC: G11C11/34
- IPC: G11C11/34
Abstract:
One embodiment includes a non-volatile memory cell array, and a read unit configured to disable read operation for the non-volatile memory cell array for a time period following writing of data in the non-volatile memory cell array.
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