发明授权
US08486768B2 Semiconductor device comprising high-k metal gate electrode structures and precision eFuses formed in the active semiconductor material
有权
半导体器件包括在有源半导体材料中形成的高k金属栅极电极结构和精密eFuse
- 专利标题： Semiconductor device comprising high-k metal gate electrode structures and precision eFuses formed in the active semiconductor material
- 专利标题（中）： 半导体器件包括在有源半导体材料中形成的高k金属栅极电极结构和精密eFuse
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申请号： US13114116申请日： 2011-05-24
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公开(公告)号： US08486768B2公开(公告)日： 2013-07-16
- 发明人: Andreas Kurz , Stephan Kronholz
- 申请人： Andreas Kurz , Stephan Kronholz
- 申请人地址： KY Grand Cayman
- 专利权人： GLOBALFOUNDRIES Inc.
- 当前专利权人： GLOBALFOUNDRIES Inc.
- 当前专利权人地址： KY Grand Cayman
- 代理机构： Williams, Morgan & Amerson, P.C.
- 优先权： DE102010030765 20100630
- 主分类号： H01L21/82
- IPC分类号： H01L21/82
摘要：
In a complex semiconductor device, electronic fuses may be formed in the active semiconductor material by using a semiconductor material of reduced heat conductivity selectively in the fuse body, wherein, in some illustrative embodiments, the fuse body may be delineated by a non-silicided semiconductor base material.
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