发明授权
- 专利标题： Method of forming CMOS FinFET device
- 专利标题（中）： CMOS FinFET器件的形成方法
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申请号： US13340937申请日： 2011-12-30
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公开(公告)号： US08486770B1公开(公告)日： 2013-07-16
- 发明人: Cheng-Hsien Wu , Chih-Hsin Ko , Clement Hsingjen Wann
- 申请人： Cheng-Hsien Wu , Chih-Hsin Ko , Clement Hsingjen Wann
- 申请人地址： TW Hsin-Chu
- 专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人地址： TW Hsin-Chu
- 代理机构： Haynes and Boone, LLP
- 主分类号： H01L21/335
- IPC分类号： H01L21/335
摘要：
A CMOS FinFET device and method for fabricating a CMOS FinFET device is disclosed. An exemplary CMOS FinFET device includes a substrate including a first region and a second region. The CMOS FinFET further includes a fin structure disposed over the substrate including a first fin in the first region and a second fin in the second region. The CMOS FinFET further includes a first portion of the first fin comprising a material that is the same material as the substrate and a second portion of the first fin comprising a III-V semiconductor material deposited over the first portion of the first fin. The CMOS FinFET further includes a first portion of the second fin comprising a material that is the same material as the substrate and a second portion of the second fin comprising a germanium (Ge) material deposited over the first portion of the second fin.
公开/授权文献
- US20130168771A1 Method of Forming CMOS FinFET Device 公开/授权日：2013-07-04
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