Invention Grant
- Patent Title: Variable capacitance chamber component incorporating a semiconductor junction and methods of manufacturing and using thereof
- Patent Title (中): 包含半导体结的可变电容室部件及其制造和使用方法
-
Application No.: US13366340Application Date: 2012-02-05
-
Publication No.: US08486798B1Publication Date: 2013-07-16
- Inventor: Zhiying Chen , Jianping Zhao , Lee Chen , Merritt Funk , Radha Sundararajan
- Applicant: Zhiying Chen , Jianping Zhao , Lee Chen , Merritt Funk , Radha Sundararajan
- Applicant Address: JP Tokyo
- Assignee: Tokyo Electron Limited
- Current Assignee: Tokyo Electron Limited
- Current Assignee Address: JP Tokyo
- Main IPC: H01L21/20
- IPC: H01L21/20 ; H01L29/93 ; H01L21/306
Abstract:
A replaceable chamber element for use in a plasma processing system, such as a plasma etching system, is described. The replaceable chamber element includes a chamber component configured to be exposed to plasma in a plasma processing system, wherein the chamber component is fabricated to include a semiconductor junction, and wherein a capacitance of the chamber component is varied when a voltage is applied across the semiconductor junction.
Public/Granted literature
Information query
IPC分类:
