Invention Grant
US08486807B2 Realizing N-face III-nitride semiconductors by nitridation treatment
有权
通过氮化处理实现N面III族氮化物半导体
- Patent Title: Realizing N-face III-nitride semiconductors by nitridation treatment
- Patent Title (中): 通过氮化处理实现N面III族氮化物半导体
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Application No.: US12972184Application Date: 2010-12-17
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Publication No.: US08486807B2Publication Date: 2013-07-16
- Inventor: Chen-Hua Yu , Chia-Lin Yu , Ding-Yuan Chen , Wen-Chih Chiou
- Applicant: Chen-Hua Yu , Chia-Lin Yu , Ding-Yuan Chen , Wen-Chih Chiou
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Slater & Matsil, L.L.P.
- Main IPC: H01L21/20
- IPC: H01L21/20 ; H01L21/36
Abstract:
A method of forming a semiconductor structure includes providing a substrate; forming a buffer/nucleation layer over the substrate; forming a group-III nitride (III-nitride) layer over the buffer/nucleation layer; and subjecting the III-nitride layer to a nitridation. The step of forming the III-nitride layer comprises metal organic chemical vapor deposition.
Public/Granted literature
- US20110189837A1 Realizing N-Face III-Nitride Semiconductors by Nitridation Treatment Public/Granted day:2011-08-04
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