Invention Grant
US08487297B2 Field effect transistor, method for manufacturing the same, and biosensor
失效
场效应晶体管,其制造方法和生物传感器
- Patent Title: Field effect transistor, method for manufacturing the same, and biosensor
- Patent Title (中): 场效应晶体管,其制造方法和生物传感器
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Application No.: US13143256Application Date: 2009-12-25
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Publication No.: US08487297B2Publication Date: 2013-07-16
- Inventor: Agus Subagyo , Motonori Nakamura , Tomoaki Yamabayashi , Osamu Takahashi , Hiroaki Kikuchi , Katsunori Kondo
- Applicant: Agus Subagyo , Motonori Nakamura , Tomoaki Yamabayashi , Osamu Takahashi , Hiroaki Kikuchi , Katsunori Kondo
- Applicant Address: JP Tokyo JP Kyoto
- Assignee: Mitsumi Electric Co., Ltd.,Arkray, inc.
- Current Assignee: Mitsumi Electric Co., Ltd.,Arkray, inc.
- Current Assignee Address: JP Tokyo JP Kyoto
- Agency: Kubotera & Associate LLC
- Priority: JP2009-003628 20090109
- International Application: PCT/JP2009/007253 WO 20091225
- International Announcement: WO2010/079573 WO 20100715
- Main IPC: H01L29/06
- IPC: H01L29/06

Abstract:
Disclosed is a carbon nanotube field effect transistor which stably exhibits excellent electrical conduction properties. Also disclosed are a method for manufacturing the carbon nanotube field effect transistor, and a biosensor comprising the carbon nanotube field effect transistor. First of all, an silicon oxide film is formed on a contact region of a silicon substrate by an LOCOS method. Next, an insulating film, which is thinner than the silicon oxide film on the contact region, is formed on a channel region of the silicon substrate. Then, after arranging a carbon nanotube, which forms a channel, on the silicon substrate, the carbon nanotube is covered with a protective film. Finally, a source electrode and a drain electrode are formed, and the source electrode and the drain electrode are electrically connected to the carbon nanotube, respectively. A field effect transistor manufactured by these processes stably exhibits excellent electrical conduction properties since the carbon nanotube, which serves as the channel, is not contaminated.
Public/Granted literature
- US20110291075A1 FIELD EFFECT TRANSISTOR, METHOD FOR MANUFACTURING THE SAME, AND BIOSENSOR Public/Granted day:2011-12-01
Information query
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