发明授权
- 专利标题： Graphene device and method of manufacturing the same
- 专利标题（中）： 石墨烯装置及其制造方法
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申请号： US13307370申请日： 2011-11-30
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公开(公告)号： US08487356B2公开(公告)日： 2013-07-16
- 发明人: Jin seong Heo , Sun-ae Seo , Dong-chul Kim , Yun-sung Woo , Hyun-jong Chung
- 申请人： Jin seong Heo , Sun-ae Seo , Dong-chul Kim , Yun-sung Woo , Hyun-jong Chung
- 申请人地址： KR Gyeonggi-do
- 专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人地址： KR Gyeonggi-do
- 代理机构： Harness, Dickey & Pierce, P.L.C.
- 优先权： KR10-2009-0098778 20091016
- 主分类号： H01L29/778
- IPC分类号： H01L29/778 ; H01L21/78 ; H01L21/00
摘要：
The graphene device may include an upper oxide layer on at least one embedded gate, and a graphene channel and a plurality of electrodes on the upper oxide layer. The at least one embedded gate may be formed on the substrate. The graphene channel may be formed on the plurality of electrodes, or the plurality of electrodes may be formed on the graphene channel.
公开/授权文献
- US20120075008A1 GRAPHENE DEVICE AND METHOD OF MANUFACTURING THE SAME 公开/授权日：2012-03-29
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