Invention Grant
- Patent Title: Graphene device and method of manufacturing the same
- Patent Title (中): 石墨烯装置及其制造方法
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Application No.: US13307370Application Date: 2011-11-30
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Publication No.: US08487356B2Publication Date: 2013-07-16
- Inventor: Jin seong Heo , Sun-ae Seo , Dong-chul Kim , Yun-sung Woo , Hyun-jong Chung
- Applicant: Jin seong Heo , Sun-ae Seo , Dong-chul Kim , Yun-sung Woo , Hyun-jong Chung
- Applicant Address: KR Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Gyeonggi-do
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: KR10-2009-0098778 20091016
- Main IPC: H01L29/778
- IPC: H01L29/778 ; H01L21/78 ; H01L21/00
Abstract:
The graphene device may include an upper oxide layer on at least one embedded gate, and a graphene channel and a plurality of electrodes on the upper oxide layer. The at least one embedded gate may be formed on the substrate. The graphene channel may be formed on the plurality of electrodes, or the plurality of electrodes may be formed on the graphene channel.
Public/Granted literature
- US20120075008A1 GRAPHENE DEVICE AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2012-03-29
Information query
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