发明授权
US08487359B2 Spin MOSFET and reconfigurable logic circuit using the spin MOSFET
有权
使用自旋MOSFET的Spin MOSFET和可重构逻辑电路
- 专利标题： Spin MOSFET and reconfigurable logic circuit using the spin MOSFET
- 专利标题（中）： 使用自旋MOSFET的Spin MOSFET和可重构逻辑电路
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申请号： US12486999申请日： 2009-06-18
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公开(公告)号： US08487359B2公开(公告)日： 2013-07-16
- 发明人: Yoshiaki Saito , Hideyuki Sugiyama , Tomoaki Inokuchi , Mizue Ishikawa , Takao Marukame
- 申请人： Yoshiaki Saito , Hideyuki Sugiyama , Tomoaki Inokuchi , Mizue Ishikawa , Takao Marukame
- 申请人地址： JP Tokyo
- 专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人地址： JP Tokyo
- 代理机构： Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- 优先权： JP2008-191146 20080724
- 主分类号： H01L27/108
- IPC分类号： H01L27/108
摘要：
It is made possible to provide a spin MOSFET that can minimize the increase in production costs and can perform both spin injection writing and reading. A spin MOSFET includes: a substrate that has a semiconductor region of a first conductivity type; first and second ferromagnetic stacked films that are formed at a distance from each other on the semiconductor region, and each have the same stacked structure comprising a first ferromagnetic layer, a nonmagnetic layer, and a second ferromagnetic layer stacked in this order, the second ferromagnetic stacked film having a film-plane area different from that of the first ferromagnetic stacked film; a gate insulating film that is formed on a portion of the semiconductor region, the portion being located between the first ferromagnetic stacked film and the second ferromagnetic stacked film; and a gate that is formed on the gate insulating film.
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