A MOSFET layout is disclosed. The MOSFET comprises a drain region, a gate region, a source region and a body region. The gate region is disposed outside the drain region and adjacent to the drain region. The source region has a plurality of source sections, which are disposed outside of the gate region and adjacent to the gate region. Each of two adjacent source sections has a source blank zone there between. The body region has at least two body portions, which are disposed at the source blank zones and adjacent to the gate region.