发明授权
- 专利标题： High power density betavoltaic battery
- 专利标题（中）： 高功率密度betavoltaic电池
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申请号： US12851555申请日： 2010-08-06
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公开(公告)号： US08487392B2公开(公告)日： 2013-07-16
- 发明人: Michael Spencer , MVS Chandrashekhar
- 申请人： Michael Spencer , MVS Chandrashekhar
- 申请人地址： US DE
- 专利权人： Widetronix, Inc.
- 当前专利权人： Widetronix, Inc.
- 当前专利权人地址： US DE
- 代理机构： MaxvalueIP LLC
- 主分类号： H01L27/14
- IPC分类号： H01L27/14
摘要：
To increase total power in a betavoltaic device, it is desirable to have greater radioisotope material and/or semiconductor surface area, rather than greater radioisotope material volume. An example of this invention is a high power density betavoltaic battery. In one example of this invention, tritium is used as a fuel source. In other examples, radioisotopes, such as Nickel-63, Phosphorus-33 or promethium, may be used. The semiconductor used in this invention may include, but is not limited to, Si, GaAs, GaP, GaN, diamond, and SiC. For example (for purposes of illustration/example, only), tritium will be referenced as an exemplary fuel source, and SiC will be referenced as an exemplary semiconductor material. Other variations and examples are also discussed and given.
公开/授权文献
- US20110298071A9 HIGH POWER DENSITY BETAVOLTAIC BATTERY 公开/授权日：2011-12-08
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