Invention Grant
- Patent Title: On-chip capacitor structure
- Patent Title (中): 片上电容器结构
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Application No.: US13236536Application Date: 2011-09-19
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Publication No.: US08487406B2Publication Date: 2013-07-16
- Inventor: Hooman Darabi , Qiang Li , Bo Zhang
- Applicant: Hooman Darabi , Qiang Li , Bo Zhang
- Applicant Address: US CA Irvine
- Assignee: Broadcom Corporation
- Current Assignee: Broadcom Corporation
- Current Assignee Address: US CA Irvine
- Agency: McDermott Will & Emery LLP
- Main IPC: H01L21/02
- IPC: H01L21/02

Abstract:
At least a first capacitor is formed on a substrate and connected to a first differential node of a differential circuit, and the first capacitor may be variable in capacitance. A second capacitor is formed on the substrate and connected to a second differential node of the differential circuit, and the second capacitor also may be variable. A third capacitor is connected between the first differential node and the second differential node, and is formed at least partially above the first capacitor. In this way, a size of the first capacitor and/or the second capacitor may be reduced on the substrate, and capacitances of the first and/or second capacitor(s) may be adjusted in response to a variable characteristic of one or more circuit components of the differential circuit.
Public/Granted literature
- US20120007215A1 ON-CHIP CAPACITOR STRUCTURE Public/Granted day:2012-01-12
Information query
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