发明授权
US08487411B2 Multiple patterning using improved patternable low-κ dielectric materials
失效
使用改进的可图案化的低kappa介电材料进行多重图案化
- 专利标题： Multiple patterning using improved patternable low-κ dielectric materials
- 专利标题（中）： 使用改进的可图案化的低kappa介电材料进行多重图案化
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申请号： US13407141申请日： 2012-02-28
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公开(公告)号： US08487411B2公开(公告)日： 2013-07-16
- 发明人: Qinghuang Lin
- 申请人： Qinghuang Lin
- 申请人地址： US NY Armonk
- 专利权人： International Business Machines Corporation
- 当前专利权人： International Business Machines Corporation
- 当前专利权人地址： US NY Armonk
- 代理机构： Scully, Scott, Murphy & Presser, P.C.
- 代理商 Daniel P. Morris, Esq.
- 主分类号： H01L23/58
- IPC分类号： H01L23/58
摘要：
A double patterned semiconductor structure is provided. The structure includes a first patterned and cured low-k structure located on a first portion of an antireflective coating, and a second patterned and cured low-k structure located on a second portion of the antireflective coating, wherein the second patterned and cured low-k structure is spaced apart from the first patterned and cured low-k dielectric structure.
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