Invention Grant
- Patent Title: Passivation film for electronic device and method of manufacturing the same
- Patent Title (中): 电子器件钝化膜及其制造方法
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Application No.: US13157083Application Date: 2011-06-09
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Publication No.: US08487413B2Publication Date: 2013-07-16
- Inventor: Yong-Tak Kim , Yoon-Hyeung Cho , Min-Ho Oh , Byoung-Duk Lee , So-Young Lee , Seung-Yong Song , Jong-Hyuk Lee
- Applicant: Yong-Tak Kim , Yoon-Hyeung Cho , Min-Ho Oh , Byoung-Duk Lee , So-Young Lee , Seung-Yong Song , Jong-Hyuk Lee
- Applicant Address: KR
- Assignee: Samsung Display Co., Ltd.
- Current Assignee: Samsung Display Co., Ltd.
- Current Assignee Address: KR
- Agency: Knobbe Martens Olson & Bear LLP
- Priority: KR10-2010-0104184 20101025
- Main IPC: H01L23/58
- IPC: H01L23/58
Abstract:
Disclosed are a passivation film for an electronic device having a nitride film formed on a substrate by a plasma-enhanced chemical vapor deposition (PECVD) method using a silicon-containing gas and a nitrogen-containing gas and a plasma-processed film formed by plasma processing a surface of the nitride film by a PECVD method using an NH3 gas, an N2 gas, and a H2 gas, and a method of manufacturing the passivation film.
Public/Granted literature
- US20120098108A1 PASSIVATION FILM FOR ELECTRONIC DEVICE AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2012-04-26
Information query
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