发明授权
- 专利标题: Semiconductor device
- 专利标题(中): 半导体器件
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申请号: US13229985申请日: 2011-09-12
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公开(公告)号: US08487688B2公开(公告)日: 2013-07-16
- 发明人: Toshiki Seshita
- 申请人: Toshiki Seshita
- 申请人地址: JP Tokyo
- 专利权人: Kabushiki Kaisha Toshiba
- 当前专利权人: Kabushiki Kaisha Toshiba
- 当前专利权人地址: JP Tokyo
- 代理机构: Turocy & Watson, LLP
- 优先权: JP2010-265311 20101129
- 主分类号: H03K3/00
- IPC分类号: H03K3/00
摘要:
According to one embodiment, a semiconductor device includes an interface, a power supply, a driver, and a switch section. The interface includes a first MOSFET and converts a terminal switch signal of input serial data into parallel data. The first MOSFET is provided on the SOI substrate and has a back gate in a floating state. The power supply includes a second MOSFET and generates an ON potential higher than a potential of a power supply to be supplied to the interface. The second MOSFET is provided on the SOI substrate and has a back gate connected to a source. The driver includes a third MOSFET and outputs a control signal for controlling the ON potential to be in a high level according to the parallel data. The third MOSFET is provided on the SOI substrate and has a back gate connected to a source.
公开/授权文献
- US20120132977A1 SEMICONDUCTOR DEVICE 公开/授权日:2012-05-31
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