Invention Grant
- Patent Title: Selecting PA bias levels of RF PA circuitry during a multislot burst
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Application No.: US13304762Application Date: 2011-11-28
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Publication No.: US08489048B2Publication Date: 2013-07-16
- Inventor: Roman Zbigniew Arkiszewski , Brian Baxter , Stuart Williams , Hirofumi Honjo , William David Southcombe , David E. Jones , Chris Levesque , Scott Yoder , Terry J. Stockert
- Applicant: Roman Zbigniew Arkiszewski , Brian Baxter , Stuart Williams , Hirofumi Honjo , William David Southcombe , David E. Jones , Chris Levesque , Scott Yoder , Terry J. Stockert
- Applicant Address: US NC Greensboro
- Assignee: RF Micro Devices, Inc.
- Current Assignee: RF Micro Devices, Inc.
- Current Assignee Address: US NC Greensboro
- Agency: Withrow & Terranova, P.L.L.C.
- Main IPC: H01Q11/12
- IPC: H01Q11/12 ; H04B1/04

Abstract:
Power amplifier (PA) control circuitry and PA bias circuitry are disclosed. During one slot of a multislot transmit burst from radio frequency (RF) PA circuitry, the PA control circuitry selects one PA bias level of the RF PA circuitry and the RF PA circuitry has one output power level. The RF PA circuitry has a next output power level during an adjacent next slot of the multislot transmit burst. If the one output power level exceeds the next output power level by more than a power drop limit, then the PA control circuitry maintains the one PA bias level during the adjacent next slot. If the one output power level significantly exceeds the next output power level, but by less than the power drop limit, then the PA control circuitry selects a next PA bias level, which is less than the one PA bias level, during the adjacent next slot.
Public/Granted literature
- US08913971B2 Selecting PA bias levels of RF PA circuitry during a multislot burst Public/Granted day:2014-12-16
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