Invention Grant
US08492170B2 UV assisted silylation for recovery and pore sealing of damaged low K films
有权
UV辅助甲硅烷基化用于恢复和损坏的低K膜的孔密封
- Patent Title: UV assisted silylation for recovery and pore sealing of damaged low K films
- Patent Title (中): UV辅助甲硅烷基化用于恢复和损坏的低K膜的孔密封
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Application No.: US13093351Application Date: 2011-04-25
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Publication No.: US08492170B2Publication Date: 2013-07-23
- Inventor: Bo Xie , Alexandros T. Demos , Kang Sub Yim , Thomas Nowak , Kelvin Chan
- Applicant: Bo Xie , Alexandros T. Demos , Kang Sub Yim , Thomas Nowak , Kelvin Chan
- Applicant Address: US CA Santa Clara
- Assignee: Applied Materials, Inc.
- Current Assignee: Applied Materials, Inc.
- Current Assignee Address: US CA Santa Clara
- Agency: Patterson & Sheridan, LLP
- Main IPC: H01L21/30
- IPC: H01L21/30
Abstract:
Methods for the repair of damaged low k films are provided. Damage to the low k films occurs during processing of the film such as during etching, ashing, and planarization. The processing of the low k film causes water to store in the pores of the film and further causes hydrophilic compounds to form in the low k film structure. Repair processes incorporating ultraviolet (UV) radiation and silylation compounds remove the water from the pores and further remove the hydrophilic compounds from the low k film structure.
Public/Granted literature
- US20120270339A1 UV ASSISTED SILYLATION FOR RECOVERY AND PORE SEALING OF DAMAGED LOW K FILMS Public/Granted day:2012-10-25
Information query
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