发明授权
- 专利标题： Chemical mechanical polishing aqueous dispersion and chemical mechanical polishing method
- 专利标题（中）： 化学机械抛光水性分散体和化学机械抛光方法
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申请号： US12537766申请日： 2009-08-07
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公开(公告)号： US08492276B2公开(公告)日： 2013-07-23
- 发明人: Taichi Abe , Hirotaka Shida , Akihiro Takemura , Mitsuru Meno , Shinichi Hirasawa , Kenji Iwade , Takeshi Nishioka
- 申请人： Taichi Abe , Hirotaka Shida , Akihiro Takemura , Mitsuru Meno , Shinichi Hirasawa , Kenji Iwade , Takeshi Nishioka
- 申请人地址： JP Tokyo JP Tokyo
- 专利权人： JSR Corporation,Kabushiki Kaisha Toshiba
- 当前专利权人： JSR Corporation,Kabushiki Kaisha Toshiba
- 当前专利权人地址： JP Tokyo JP Tokyo
- 代理机构： Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- 优先权： JP2008-240851 20080919
- 主分类号： H01L21/3212
- IPC分类号： H01L21/3212
摘要：
A chemical mechanical polishing aqueous dispersion is used to polish a polishing target that includes an interconnect layer that contains tungsten. The chemical mechanical polishing aqueous dispersion includes: (A) a cationic water-soluble polymer; (B) an iron (III) compound; and (C) colloidal silica particles. The content (MA) (mass %) of the cationic water-soluble polymer (A) and the content (MB) (mass %) of the iron (III) compound (B) satisfy the relationship “MA/MB=0.004 to 0.1”. The chemical mechanical polishing aqueous dispersion has a pH of 1 to 3.