发明授权
US08492811B2 Self-aligned strap for embedded capacitor and replacement gate devices
有权
嵌入式电容器和更换栅极器件的自对准带
- 专利标题: Self-aligned strap for embedded capacitor and replacement gate devices
- 专利标题(中): 嵌入式电容器和更换栅极器件的自对准带
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申请号: US12886224申请日: 2010-09-20
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公开(公告)号: US08492811B2公开(公告)日: 2013-07-23
- 发明人: Roger A. Booth, Jr. , Kangguo Cheng , Joseph Ervin , Chengwen Pei , Geng Wang
- 申请人: Roger A. Booth, Jr. , Kangguo Cheng , Joseph Ervin , Chengwen Pei , Geng Wang
- 申请人地址: US NY Armonk
- 专利权人: International Business Machines Corporation
- 当前专利权人: International Business Machines Corporation
- 当前专利权人地址: US NY Armonk
- 代理机构: Scully, Scott, Murphy & Presser, P.C.
- 代理商 Joseph P. Abate, Esq.
- 主分类号: H01L27/108
- IPC分类号: H01L27/108
摘要:
After forming a planarization dielectric layer in a replacement gate integration scheme, disposable gate structures are removed and a stack of a gate dielectric layer and a gate electrode layer is formed within recessed gate regions. Each gate electrode structure is then recessed below a topmost surface of the gate dielectric layer. A dielectric metal oxide portion is formed above each gate electrode by planarization. The dielectric metal oxide portions and gate spacers are employed as a self-aligning etch mask in combination with a patterned photoresist to expose and metalize semiconductor surfaces of a source region and an inner electrode in each embedded memory cell structure. The metalized semiconductor portions form metal semiconductor alloy straps that provide a conductive path between the inner electrode of a capacitor and the source of an access transistor.