Invention Grant
US08495283B2 Nonvolatile memory device, memory system comprising nonvolatile memory device, and wear leveling method for nonvolatile memory device
有权
非易失性存储器件，包括非易失性存储器件的存储器系统和用于非易失性存储器件的磨损均衡方法
- Patent Title: Nonvolatile memory device, memory system comprising nonvolatile memory device, and wear leveling method for nonvolatile memory device
- Patent Title (中): 非易失性存储器件，包括非易失性存储器件的存储器系统和用于非易失性存储器件的磨损均衡方法
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Application No.: US12947003Application Date: 2010-11-16
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Publication No.: US08495283B2Publication Date: 2013-07-23
- Inventor: Min Gun Park , Ki Tae Park
- Applicant: Min Gun Park , Ki Tae Park
- Applicant Address: KR Suwon-si, Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si, Gyeonggi-do
- Agency: Volentine & Whitt, PLLC
- Priority: KR10-2009-0116010 20091127
- Main IPC: G06F12/00
- IPC: G06F12/00
Abstract:
A nonvolatile memory device comprises a memory core and a controller for controlling the wear level of a memory block in the nonvolatile memory device. The controller determines the wear level of a memory block by obtaining data of an actual wear level from a charge measurement cell of a selected region of the memory cell, and stores the wear level of the selected region in an erase count table.
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