Invention Grant
- Patent Title: Non-volatile memory with extended error correction protection
- Patent Title (中): 具有扩展纠错保护功能的非易失性存储器
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Application No.: US13684919Application Date: 2012-11-26
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Publication No.: US08495481B2Publication Date: 2013-07-23
- Inventor: Christopher Bueb
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Knobbe Martens Olson & Bear LLP
- Main IPC: G06F11/00
- IPC: G06F11/00
Abstract:
Embodiments of the present disclosure provide methods and apparatuses related to NVM devices with extended error correction protection. In some embodiments, a parity cache is used to store parity values of data values stored in a plurality of codewords of an NVM device. Other embodiments may be described and claimed.
Public/Granted literature
- US20130080856A1 NON-VOLATILE MEMORY WITH EXTENDED ERROR CORRECTION PROTECTION Public/Granted day:2013-03-28
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