发明授权
- 专利标题： Film forming apparatus and film-forming method
- 专利标题（中）： 成膜装置及成膜方法
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申请号： US13151081申请日： 2011-06-01
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公开(公告)号： US08497217B2公开(公告)日： 2013-07-30
- 发明人: Takahiro Ito , Kenji Nakashima
- 申请人： Takahiro Ito , Kenji Nakashima
- 申请人地址： JP Aichi-ken
- 专利权人： Toyota Jidosha Kabushiki Kaisha
- 当前专利权人： Toyota Jidosha Kabushiki Kaisha
- 当前专利权人地址： JP Aichi-ken
- 代理机构： Sughrue Mion, PLLC
- 优先权： JP2008-307492 20081202
- 主分类号： H01L21/205
- IPC分类号： H01L21/205
摘要：
A film forming apparatus and a film forming method for suppressing a drop in the film forming speed caused by-product gas are provided. A film forming apparatus for forming a film on a wafer includes a chamber in which the wafer is located; a gas introducing member configured to introduce raw material gas into the chamber, in which the raw material gas turning into by-product gas and a substance which adheres to the surface of the wafer by reacting at a surface of the wafer; and a reverse reaction member configured to generate the raw material gas by causing the by-product gas to react in the chamber.
公开/授权文献
- US20110230055A1 FILM FORMING APPARATUS AND FILM-FORMING METHOD 公开/授权日：2011-09-22