发明授权
US08497548B2 Semiconductor device including a MOS transistor and production method therefor
有权
包括MOS晶体管的半导体器件及其制造方法
- 专利标题： Semiconductor device including a MOS transistor and production method therefor
- 专利标题（中）： 包括MOS晶体管的半导体器件及其制造方法
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申请号： US12768290申请日： 2010-04-27
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公开(公告)号： US08497548B2公开(公告)日： 2013-07-30
- 发明人: Fujio Masuoka , Shintaro Arai
- 申请人： Fujio Masuoka , Shintaro Arai
- 申请人地址： SG Peninsula Plaza
- 专利权人： Unisantis Electronics Singapore PTE Ltd.
- 当前专利权人： Unisantis Electronics Singapore PTE Ltd.
- 当前专利权人地址： SG Peninsula Plaza
- 代理机构： Brinks Hofer Gilson & Lione
- 优先权： JP2009-109126 20090428
- 主分类号： H01L29/78
- IPC分类号： H01L29/78
摘要：
It is intended to provide a semiconductor device including a MOS transistor, comprising: a semiconductor pillar; a bottom doped region formed in contact with a lower part of the semiconductor pillar; a first gate formed around a sidewall of the semiconductor pillar through a first dielectric film therebetween; and a top doped region formed so as to at least partially overlap a top surface of the semiconductor pillar, wherein the top doped region has a top surface having an area greater than that of the top surface of the semiconductor pillar.
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